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Typical Characteristics
10
100
8
I D = 220mA
V DS = 8V
25V
80
f = 1 MHz
V GS = 0 V
30V
6
4
2
0
60
40
20
0
C OSS
C RSS
C ISS
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0
10
20
30
40
50
Q g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
10
5
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
SINGLE PULSE
1
0.1
R DS(ON) LIMIT
1ms
10ms
100ms
1s
DC
100 μ s
4
3
2
R θ JA = 350°C/W
T A = 25°C
V GS = 10V
0.01
0.001
SINGLE PULSE
R θ JA = 350 o C/W
T A = 25 o C
1
0
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
t 1 , TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
R θ JA = 350 C/W
D = 0.5
0.2
R θ JA (t) = r(t) * R θ JA
o
0.1
0.1
0.05
P(pk)
0.01
0.001
0.02
0.01
SINGLE PULSE
t 1
t 2
T J - T A = P * R θ JA (t)
Duty Cycle, D = t 1 / t 2
0.0001
0.001
0.01
0.1
1
10
100
1000
t 1 , TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.
BSS138 Rev C( W)
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相关PDF资料
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MOSFET DUAL N-CHAN 50V SC70-6
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